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silicon carbide in northern in malaysia

Hidayu Jamil Noorinas research works | Universiti Malaysia

Hidayu Jamil Noorinas 2 research works with 4 citations and 969 reads, including: Production of Silicon Carbide via Grinding and Heat Treatment Process

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and buyers and suppliers and manufacturers database in the

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matrix composites with unidirectional silicon carbide

Pin Go; Changmo Sung; J. J. Kostetsky; T. Vasilos, 2002: Silicon nitride matrix composites with unidirectional silicon carbide whisker reinforcement E

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the growth processes from vapor phase of silicon carbide

S. K. Lilov, 2008: Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high

Device and method for producing silicon carbide - Patents

2019416-The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the for

Silicon Carbide Market 2018 : Global Industry Growth,

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Reducing stress in silicon carbide epitaxial layers | Request

Request PDF on ResearchGate | Reducing stress in silicon carbide epitaxial layers | A susceptor for the epitaxial growth of silicon carbide, with an up-

Output Capacitance Loss Characterization of Silicon Carbide

Request PDF on ResearchGate | Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes | In high-frequency (HF) and very high-frequency

A 1 MHz hard-switched silicon carbide DC/DC converter (

2019420-Get this from a library! A 1 MHz hard-switched silicon carbide DC/DC converter. [18th Annual Applied Power Electronics Conference - APEC 200

in high-temperature furnaces for silicon carbide

Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the

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Method of forming silicon carbide

Method of forming silicon carbidedoi:US5296258 AA low temperature CVD methodUS5296258 * Sep 30, 1992 Mar 22, 1994 Northern Telecom Limited Method of

SCT20N120 - Silicon carbide Power MOSFET 1200 V, 20 A, 189

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Making silicon-carbide kiln furniture

Making silicon-carbide kiln furniture doi:10.1007/ M. Strongin

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Structural changes in the surface layers of self-bound silicon carbide in high-temperature friction doi:10.1007//p>

- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

Size-dependent Effects in Silicon Carbide and Diamond

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Presolar silicon carbide grains of type A+B

Presolar silicon carbide grains of type A+BThe Fanos granite occurs in the Peonias subzone of the eastern Axios-Vardar zone in northern Greece. The

Micropipes migration mechanisms in silicon carbide

Micropipes migration mechanisms in silicon carbideDD AvrovAS BakinSI Dorozhkin

corrosion of aluminumsilicon carbide composites in a

Z. Ahmad; P. T. Paulette; B. J. A. Aleem, 2000: Mechanism of localized corrosion of aluminumsilicon carbide composites in a chloride containing