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OPTICAL DEVICE WAFER PROCESSING METHOD - Patent application

wafer along said division lines from a back side(Al2O3) substrate and a silicon carbide (SiC)[0039] Focused spot diameter: 10 μm [0040]

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The present invention relates to an unsiliconized or siliconized wafer consisting essentially of recrystallized silicon carbide, the wafer having a diameter o

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